Base Material | GaInP₂/GaAs/Ge on Ge substrate |
AR-coating | TiOx/Al O₃ |
Dimensions | (60.65mm±0.1mm) × (40.15mm±0.1mm) |
Cell Area | 24.0cm² |
Weight | (125±12)mg/cm² |
Thickness | 0.30mm±0.05mm |
Coverglass | KFB 120 |
Coverglass thickness | 120±20μm |
Interconnectors | Kovar, silver coated |
Interconnector thickness | 35μm |
Average Open Circuit Voc (mV) | 2740 |
Average Short Circuit Jsc (mA/cm²) | 17.3 |
Voltage @ Max. Power Vm (mV) | 2430 |
Current @ Max. Power Im (mA/cm²) | 16.6 |
Average Efficiency ηave (1353W/m²) | 30% |
Parameters | 1×10¹⁴e/cm² | 5×10¹⁴e/cm² | 1×10¹⁵e/cm² |
Im/Im₀ | 0.98 | 0.96 | 0.93 |
Vm/Vm₀ | 0.96 | 0.92 | 0.90 |
Pr/Pm₀ | 0.94 | 0.88 | 0.84 |
Voltage Vₗ | 2300mV |
Min. average current Iₗmin @ Vₗ | 500mA |
Min. individual current Iₗave @ Vₗ | 480mA |
Vforward (620mA) | ≤1.0V |
Ireverse (4.0V) | ≤0.2mA |
Parameters | BOL | 1 MeV, 5×10¹⁴e/cm² | 1 MeV, 1×10¹⁵e/cm² |
Jsc (µA/cm²/℃) | 11.0 | 10.0 | 13.0 |
Voc (mV/℃) | -5.9 | -6.1 | -6.3 |
Im (µA/cm²/℃) | 9.0 | 9.5 | 15.0 |
Vm (mV/℃) | -6.0 | -6.2 | -6.5 |
Absorptivity | ≤ 0.92 |
Pull Test (at 45°) | ≥0.83N/mm² |
Status | Qualified |