Basic materials | GaInP2/GaAs/Ge on Ge substrate |
oxide layer | TiOX/Al2O3 |
size | 144.45mm×68.65mm |
Effective area | 80cm2 |
weight | 13.2±1.0g |
thickness | 0.40±0.05mm |
Glass cover plate | Irradiation resistant glass cover,120±20μm |
Interconnection strip | KOVAR,35μm |
Open circuit voltage Voc (mV) | 2780 |
Short circuit current density Jsc (mA/cm2) | 17.0 |
Optimal working point voltage Vm (mV) | 2470 |
Best operating point current Jm (mA/cm2) | 16.3 |
Conversion efficiency η (1353W/m2) | 30% |